类型 | 描述 |
---|---|
系列: | - |
包裹: | Box |
零件状态: | Active |
二极管型: | Standard |
电压 - 直流反向 (vr) (max): | 2.88 kV |
电流 - 平均整流 (io): | 7395A |
电压 - 正向 (vf) (max) @ if: | 1.4 V @ 7 kA |
速度: | Standard Recovery >500ns, > 200mA (Io) |
反向恢复时间 (trr): | 69 µs |
电流 - 反向泄漏@ vr: | 120 mA @ 2.88 kV |
电容@vr, f: | - |
安装类型: | Chassis Mount |
包/箱: | DO-200AE |
供应商设备包: | W112 |
工作温度 - 结: | -40°C ~ 160°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AS4PDHM3_A/HVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 200V 2.4A TO277A |
|
MBR130HWTRSMC Diode Solutions |
DIODE SCHOTTKY 30V 1A SOD123 |
|
SBR60100Roving Networks / Microchip Technology |
DIODE SCHOTTKY 100V 60A DO5 |
|
3A100 A0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 3A DO204AC |
|
UGF8BT-E3/45Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 8A ITO220AC |
|
BAS40-04E6327Rochester Electronics |
BAS40 - HIGH SPEED SWITCHING, CL |
|
PMBD6050,215Nexperia |
DIODE GEN PURP 70V 215MA TO236AB |
|
BYG20G-M3/TRVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 400V 1.5A |
|
RS1MFS MXGTSC (Taiwan Semiconductor) |
DIODE, FAST, 1A, 1000V |
|
LL101B-GS18Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 50V 30MA SOD80 |
|
ES3B-E3/9ATVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 3A DO214AB |
|
SK320TRSMC Diode Solutions |
DIODE SCHOTTKY 200V 3A SMC |
|
UG1B-M3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 1A DO204AL |