类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
二极管型: | - |
电压 - 直流反向 (vr) (max): | - |
电流 - 平均整流 (io): | - |
电压 - 正向 (vf) (max) @ if: | - |
速度: | - |
反向恢复时间 (trr): | - |
电流 - 反向泄漏@ vr: | - |
电容@vr, f: | - |
安装类型: | - |
包/箱: | - |
供应商设备包: | - |
工作温度 - 结: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
TPAR3J S1GTSC (Taiwan Semiconductor) |
DIODE AVALANCHE 600V 3A TO277A |
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NHP820LFST1GSanyo Semiconductor/ON Semiconductor |
RECTIFIER 200V 8A |
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VS-240U60DVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 320A DO205AB |
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1N5295Solid State Inc. |
FED .82 MA DO35 |
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1SS400T1Rochester Electronics |
RECTIFIER DIODE, 0.2A, 100V |
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1N6481HE3/96Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 1A DO213AB |
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NSB8GTHE3_A/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 8A TO263AB |
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SFF1005G C0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 300V 10A ITO220AB |
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D4810N28TVFXPSA1IR (Infineon Technologies) |
DIODE GEN PURP 2.8KV 4810A |
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GP30M-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 3A DO201AD |
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1N1206ARGeneSiC Semiconductor |
DIODE GEN PURP REV 600V 12A DO4 |
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BAT54-E3-18Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 30V 200MA SOT23 |
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BAS45A,113Nexperia |
DIODE GEN PURP 125V 250MA DO34 |