English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101 |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 二极管型: | Super Barrier |
| 电压 - 直流反向 (vr) (max): | 100 V |
| 电流 - 平均整流 (io): | 8A |
| 电压 - 正向 (vf) (max) @ if: | 880 mV @ 8 A |
| 速度: | Standard Recovery >500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | - |
| 电流 - 反向泄漏@ vr: | 2 µA @ 100 V |
| 电容@vr, f: | - |
| 安装类型: | Surface Mount |
| 包/箱: | PowerDI™ 5 |
| 供应商设备包: | PowerDI™ 5 |
| 工作温度 - 结: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
ER1Q-LTPMicro Commercial Components (MCC) |
1ASUPERFASTRECOVERYSILICONRECTIF |
|
US1D-E3/61TVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 1A DO214AC |
|
MBR440MFST1GRochester Electronics |
RECTIFIER DIODE, SCHOTTKY, 4A, 4 |
|
1N4448 A0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 150MA DO35 |
|
RS1KHE3_A/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 1A DO214AC |
|
VS-50WQ03FNTRHM3Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 30V 5.5A DPAK |
|
RB751S40T5GSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 40V 30MA SOD523 |
|
RGP10B-E3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 1A DO204AL |
|
VS-6F100MVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 6A DO203AA |
|
FR202G R0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 2A DO204AC |
|
MCL103A-TR3Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 40V 200MA MICMELF |
|
JANTXV1N4454UR-1Roving Networks / Microchip Technology |
DIODE GEN PURP 50V 200MA DO213AA |
|
STPS3150UYSTMicroelectronics |
DIODE SCHOTTKY 150V 3A SMB |
