类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Box (TB) |
零件状态: | Active |
二极管型: | Standard |
电压 - 直流反向 (vr) (max): | 600 V |
电流 - 平均整流 (io): | 3A |
电压 - 正向 (vf) (max) @ if: | 1 V @ 3 A |
速度: | Standard Recovery >500ns, > 200mA (Io) |
反向恢复时间 (trr): | - |
电流 - 反向泄漏@ vr: | 5 µA @ 600 V |
电容@vr, f: | - |
安装类型: | Through Hole |
包/箱: | DO-201AD, Axial |
供应商设备包: | DO-27 (DO-201AD) |
工作温度 - 结: | -65°C ~ 125°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BAT18-05E6327Rochester Electronics |
PIN DIODE, 35V V(BR) |
|
BAS85-GS18Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 30V 200MA SOD80 |
|
RSFGL RQGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 500MA SUBSMA |
|
SE10PG-M3/84AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 1A DO220AA |
|
PDS3100-13Zetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY 100V 3A POWERDI5 |
|
ESH2PD-M3/84AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 2A DO220AA |
|
VS-2EJH02HM3/6AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 2A DO221AC |
|
JAN1N5711-1Roving Networks / Microchip Technology |
DIODE SCHOTTKY 70V 33MA DO35 |
|
RL252-TPMicro Commercial Components (MCC) |
DIODE GEN PURP 100V 2.5A R3 |
|
SL82-3GDiotec Semiconductor |
SCHOTTKY SMC 20V 8A |
|
ESH2DA R3GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 1A DO214AC |
|
SK215AHR3GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 150V 2A DO214AC |
|
VS-1N1184RVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 35A DO203AB |