English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 二极管型: | Standard |
| 电压 - 直流反向 (vr) (max): | 300 V |
| 电流 - 平均整流 (io): | 8A |
| 电压 - 正向 (vf) (max) @ if: | 1.3 V @ 8 A |
| 速度: | Fast Recovery =< 500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | 35 ns |
| 电流 - 反向泄漏@ vr: | 10 µA @ 300 V |
| 电容@vr, f: | 60pF @ 4V, 1MHz |
| 安装类型: | Through Hole |
| 包/箱: | TO-220-2 Full Pack |
| 供应商设备包: | ITO-220AC |
| 工作温度 - 结: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
S1ATRSMC Diode Solutions |
DIODE GEN PURP 50V 1A SMA |
|
GF1DHE3/5CAVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 1A DO214BA |
|
BYM36D-TAPVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 800V 2.9A SOD64 |
|
FES6DRochester Electronics |
RECTIFIER DIODE, 6A, 200V, TO-27 |
|
GL34D-E3/83Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 500MA DO213 |
|
DZ950N36KHPSA1IR (Infineon Technologies) |
DIODE GEN PURP 3.6KV 950A MODULE |
|
JAN1N6623USRoving Networks / Microchip Technology |
DIODE GEN PURP 880V 1A D5A |
|
1N4936G A0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 1A DO204AL |
|
MUR140Rochester Electronics |
DIODE GEN PURP 400V 1A AXIAL |
|
RBR5LAM30BTFTRROHM Semiconductor |
AUTOMOTIVE SCHOTTKY BARRIER DIOD |
|
BYC15-600P127Rochester Electronics |
HYPERFAST RECTIFIER DIODE TO 22 |
|
VS-EPH3006HN3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 30A TO247AC |
|
JAN1N6624USRoving Networks / Microchip Technology |
DIODE GEN PURP 990V 1A D5A |
