English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101 |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 二极管型: | Schottky |
| 电压 - 直流反向 (vr) (max): | 35 V |
| 电流 - 平均整流 (io): | 10A |
| 电压 - 正向 (vf) (max) @ if: | 570 mV @ 10 A |
| 速度: | Fast Recovery =< 500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | - |
| 电流 - 反向泄漏@ vr: | 2 mA @ 35 V |
| 电容@vr, f: | 900pF @ 5V, 1MHz |
| 安装类型: | Surface Mount |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| 供应商设备包: | D2PAK |
| 工作温度 - 结: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
UH8JT-E3/45Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 8A TO220AC |
|
VS-1N3881RVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 6A DO203AA |
|
RB150M-30TRROHM Semiconductor |
DIODE SCHOTTKY 30V 1.5A PMDS |
|
VS-30WQ06FNTRRHM3Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY DPAK |
|
S1MLHM2GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 1000V 1A SUB SMA |
|
VS-6EWH06FNTR-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 6A DPAK |
|
AU2PK-M3/87AVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 800V 1.3A TO277A |
|
SK5150L-TPMicro Commercial Components (MCC) |
5ASCHOTTKY BARRIER DIODESMC/DO-2 |
|
RGP02-12E-E3/53Vishay General Semiconductor – Diodes Division |
DIODE GP 1.2KV 500MA DO204AL |
|
SR203-TPMicro Commercial Components (MCC) |
DIODE SCHOTTKY 30V 2A DO41 |
|
BYG20J-E3/TRVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 600V 1.5A |
|
AS1PB-M3/84AVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 100V 1.5A DO220 |
|
STBR6012WSTMicroelectronics |
DIODE GEN PURP 1.2KV 60A DO247 |
