类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101 |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
二极管型: | Standard |
电压 - 直流反向 (vr) (max): | 600 V |
电流 - 平均整流 (io): | 800mA |
电压 - 正向 (vf) (max) @ if: | 1.3 V @ 800 mA |
速度: | Fast Recovery =< 500ns, > 200mA (Io) |
反向恢复时间 (trr): | 250 ns |
电流 - 反向泄漏@ vr: | 5 µA @ 600 V |
电容@vr, f: | 10pF @ 4V, 1MHz |
安装类型: | Surface Mount |
包/箱: | DO-219AB |
供应商设备包: | Sub SMA |
工作温度 - 结: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SD101AW-G3-08Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 400MW 60V SOD123 |
|
AR1PKHM3/84AVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 800V 1A DO220AA |
|
VS-T70HF10Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 70A D-55 |
|
SK54B R5GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 40V 5A DO214AA |
|
1N6627Roving Networks / Microchip Technology |
DIODE GEN PURP 440V 1.75A AXIAL |
|
1N4447Sanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 100V DO35 |
|
PMEG3020EGWXNexperia |
DIODE SCHOTTKY 30V 2A SOD123 |
|
HS1GL RVGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 1A SUB SMA |
|
MBRB10100-TPMicro Commercial Components (MCC) |
DIODE SCHOTTKY 100V 10A D2PAK |
|
STTH1R04QSTMicroelectronics |
DIODE GEN PURP 400V 1A DO15 |
|
VS-85HFLR80S05Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 85A DO203AB |
|
SS18A-F1-0000HF |
DIODE SCHOTTKY 80V 1A DO214AC |
|
VS-HFA25TB60SL-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 25A D2PAK |