类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
二极管型: | - |
电压 - 直流反向 (vr) (max): | - |
电流 - 平均整流 (io): | - |
电压 - 正向 (vf) (max) @ if: | - |
速度: | - |
反向恢复时间 (trr): | - |
电流 - 反向泄漏@ vr: | - |
电容@vr, f: | - |
安装类型: | - |
包/箱: | - |
供应商设备包: | - |
工作温度 - 结: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BAV18-TRVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 250MA DO35 |
|
RF201LAM2STRROHM Semiconductor |
DIODE GEN PURP 200V 2A PMDTM |
|
ESDLWHRVGTSC (Taiwan Semiconductor) |
DIODE, SUPER FAST |
|
EM 2BV1Sanken Electric Co., Ltd. |
DIODE GEN PURP 800V 1.2A AXIAL |
|
SK310A-TPMicro Commercial Components (MCC) |
DIODE SCHOTTKY 100V 3A DO214AC |
|
IDP15E60XKSA1Rochester Electronics |
IDP15E60 - SILICON POWER DIODE |
|
NRVB10100MFST1GSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 100V 10A 5DFN |
|
HERAF1004G C0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 300V 10A ITO220AC |
|
ESH2C-E3/52TVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 150V 2A DO214AA |
|
AIDW12S65C5XKSA1IR (Infineon Technologies) |
DIODE SCHOTTKY 650V 12A TO247 |
|
RMPG06JHE3_A/53Vishay General Semiconductor – Diodes Division |
DIODE GPP 1A 600V 200NS MPG06 |
|
BY880-1200Diotec Semiconductor |
DIODE STD D5.4X7.5 1200V 8A |
|
VS-8EWH06FNTRL-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 8A D-PAK |