English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | ECOPACK®2 |
| 包裹: | Tube |
| 零件状态: | Active |
| 二极管型: | Silicon Carbide Schottky |
| 电压 - 直流反向 (vr) (max): | 650 V |
| 电流 - 平均整流 (io): | 8A |
| 电压 - 正向 (vf) (max) @ if: | 1.45 V @ 8 A |
| 速度: | No Recovery Time > 500mA (Io) |
| 反向恢复时间 (trr): | 0 ns |
| 电流 - 反向泄漏@ vr: | 105 µA @ 650 V |
| 电容@vr, f: | 540pF @ 0V, 1MHz |
| 安装类型: | Through Hole |
| 包/箱: | TO-220-2 |
| 供应商设备包: | TO-220AC |
| 工作温度 - 结: | -40°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
UCQS20A045KYOCERA Corporation |
DIODE SCHOTTKY 45V 20A TO-263LP |
|
ES07B-M-18Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 500MA DO219 |
|
RGP30K-E3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 3A DO201AD |
|
JANTX1N6621URoving Networks / Microchip Technology |
DIODE GEN PURP 400V 1.2A A-MELF |
|
1SS307(TE85L,F)Toshiba Electronic Devices and Storage Corporation |
DIODE GEN PURP 30V 100MA SMINI |
|
AU1PDHM3/85AVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 200V 1A DO220AA |
|
SK52C V6GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 5A 20V DO-214AB |
|
MURS140HE3_A/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 2A DO214AA |
|
BYS10-25-M3/TRVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 25V 1.5A DO214AC |
|
NTE5924NTE Electronics, Inc. |
R-600PRV 20A CATH CASE |
|
S1KBTRSMC Diode Solutions |
DIODE GEN PURP 800V 1A SMB |
|
EGP10B-E3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 1A DO204AL |
|
FESB8JT-E3/81Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 8A TO263AB |
