类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101 |
包裹: | Bag |
零件状态: | Active |
二极管型: | Schottky |
电压 - 直流反向 (vr) (max): | 200 V |
电流 - 平均整流 (io): | 3A |
电压 - 正向 (vf) (max) @ if: | 850 mV @ 3 A |
速度: | Fast Recovery =< 500ns, > 200mA (Io) |
反向恢复时间 (trr): | - |
电流 - 反向泄漏@ vr: | 30 µA @ 200 V |
电容@vr, f: | 80pF @ 4V, 1MHz |
安装类型: | Surface Mount |
包/箱: | DO-214AC, SMA |
供应商设备包: | DO-214AC (SMA) |
工作温度 - 结: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
GR1M-F1-0000HF |
DIODE GEN PURP 1000V 1A DO214AC |
|
BAV20W RHGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 250V 200MA SOD123 |
|
AU02V1Sanken Electric Co., Ltd. |
DIODE GEN PURP 400V 800MA AXIAL |
|
RB068L150TE25ROHM Semiconductor |
DIODE SCHOTTKY 150V 2A PMDS |
|
MBRH24080RGeneSiC Semiconductor |
DIODE SCHOTTKY 80V 240A D67 |
|
SMBT1109-1LT1GRochester Electronics |
SS SOT23 GP XSTR SPCL TR |
|
1N4007RLGRochester Electronics |
STANDARD RECTIFIER, 1000 V, 1.0 |
|
BYT56B-TAPVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 100V 3A SOD64 |
|
S4B V6GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 4A DO214AB |
|
BYW29-200-E3/45Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 8A TO220AC |
|
VS-20ETF12SLHM3Vishay General Semiconductor – Diodes Division |
DIODES - D2PAK-E3 |
|
VS-10BQ015-M3/5BTVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 15V 1A DO214AA |
|
MA4L11100APanasonic |
DIODE GEN PURP 80V LEADLESS |