English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 二极管型: | Silicon Carbide Schottky |
| 电压 - 直流反向 (vr) (max): | 1200 V |
| 电流 - 平均整流 (io): | 10A |
| 电压 - 正向 (vf) (max) @ if: | 1.8 V @ 10 A |
| 速度: | No Recovery Time > 500mA (Io) |
| 反向恢复时间 (trr): | - |
| 电流 - 反向泄漏@ vr: | 2 µA @ 1200 V |
| 电容@vr, f: | 750pF @ 0V, 1MHz |
| 安装类型: | Through Hole |
| 包/箱: | TO-247-3 |
| 供应商设备包: | TO-247-3 |
| 工作温度 - 结: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NTE5982NTE Electronics, Inc. |
R-100 PRV 40A CATH CASE |
|
LSM340J/TR13Roving Networks / Microchip Technology |
DIODE SCHOTTKY 40V 3A DO214AB |
|
BAS70-00-HE3-08Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 70V 200MA SOT23 |
|
DSB5818Roving Networks / Microchip Technology |
DIODE SCHOTTKY 30V 1A DO204AL |
|
MUR8100ERochester Electronics |
RECTIFIER, AVALANCHE, 8A, 1000V, |
|
SE20PD-M3/85AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 1.6A DO220AA |
|
NTE626NTE Electronics, Inc. |
R-SI 600V 8A 250NS |
|
SE50PAB-M3/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 5A DO221BC |
|
SF18GHR0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 1A DO204AL |
|
RBR2MM30ATFTRROHM Semiconductor |
DIODE (RECTIFIER FRD) 30V-VR 2A- |
|
ES2D-M3/5BTVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 2A DO214AA |
|
BYG10YHM3_A/HVishay General Semiconductor – Diodes Division |
1.5A,1600V,STD,AVALANCHE,SMD |
|
NTE5866NTE Electronics, Inc. |
R-800PRV 6A CATH CASE |
