English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | eSMP® |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 二极管型: | Schottky |
| 电压 - 直流反向 (vr) (max): | 90 V |
| 电流 - 平均整流 (io): | 10A |
| 电压 - 正向 (vf) (max) @ if: | 880 mV @ 10 A |
| 速度: | Fast Recovery =< 500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | - |
| 电流 - 反向泄漏@ vr: | 10 µA @ 90 V |
| 电容@vr, f: | 270pF @ 4V, 1MHz |
| 安装类型: | Surface Mount |
| 包/箱: | TO-277, 3-PowerDFN |
| 供应商设备包: | TO-277A (SMPC) |
| 工作温度 - 结: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SK55C V7GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 5A 50V DO-214AB |
|
RB561VM-40TE-17ROHM Semiconductor |
RB561VM-40 IS SUPER LOW VF |
|
DSEP90-12AZ-TUBWickmann / Littelfuse |
POWER DIODE DISCRETES-FRED TO-26 |
|
VS-150KS40Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 150A B42 |
|
JAN1N5615USRoving Networks / Microchip Technology |
DIODE GEN PURP 200V 1A D-5A |
|
S4B R7GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 4A DO214AB |
|
UPR20E3/TR7Roving Networks / Microchip Technology |
DIODE GEN PURP 200V 2A POWERMITE |
|
PMEG3002AESFYLNexperia |
DIODE SCHOTTKY 30V 0.2A SOD962 |
|
RS1PGHM3_A/HVishay General Semiconductor – Diodes Division |
DIODE 100V 1A DO-220AA |
|
NTS1045EMFST1GSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 45V 10A 5DFN |
|
1N5818HA0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 30V 1A DO204AL |
|
SR520 A0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 200V 5A DO201AD |
|
NTE6027NTE Electronics, Inc. |
R-200 PRV 60A ANODE CASE |
