English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 二极管型: | Standard |
| 电压 - 直流反向 (vr) (max): | 200 V |
| 电流 - 平均整流 (io): | 10A |
| 电压 - 正向 (vf) (max) @ if: | 1.15 V @ 10 A |
| 速度: | Fast Recovery =< 500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | 45 ns |
| 电流 - 反向泄漏@ vr: | 100 µA @ 200 V |
| 电容@vr, f: | - |
| 安装类型: | Surface Mount |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| 供应商设备包: | D²PAK |
| 工作温度 - 结: | -65°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
1N4004GHA0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 1A DO204AL |
|
FDH300ARochester Electronics |
RECTIFIER DIODE, 0.2A, 50V, DO-3 |
|
BYM10-800-E3/97Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 1A DO213AB |
|
S3DBHM4GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 3A DO214AA |
|
MUR220RLGSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 200V 2A AXIAL |
|
GL41J-E3/97Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 1A DO213AB |
|
FMU-G26SSanken Electric Co., Ltd. |
DIODE GEN PURP 600V 10A TO220F |
|
1N4006B-GComchip Technology |
DIODE GEN PURP 800V 1A DO41 |
|
LL101A-GS08Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 60V 30MA SOD80 |
|
RBR1L30ADDTE25ROHM Semiconductor |
LOW VF TYPE AUTOMOTIVE SCHOTTKY |
|
IDH09SG60CXKSA2IR (Infineon Technologies) |
DIODE SCHOTTKY 600V 9A TO220-2 |
|
VS-8TQ080STRR-M3Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 80V 8A TO263AB |
|
SS14HR3GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 40V 1A DO214AC |
