English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 二极管型: | Schottky |
| 电压 - 直流反向 (vr) (max): | 40 V |
| 电流 - 平均整流 (io): | 1.5A |
| 电压 - 正向 (vf) (max) @ if: | 490 mV @ 2 A |
| 速度: | Fast Recovery =< 500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | - |
| 电流 - 反向泄漏@ vr: | 500 µA @ 40 V |
| 电容@vr, f: | 134pF @ 10V, 1MHz |
| 安装类型: | Surface Mount |
| 包/箱: | DO-214AC, SMA |
| 供应商设备包: | SMA |
| 工作温度 - 结: | -40°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
1N6076Roving Networks / Microchip Technology |
DIODE GEN PURP 50V 1.3A AXIAL |
|
RGL41B/1Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 1A DO213AB |
|
V8PM10-M3/HVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 100V 8A TO277A |
|
SK84CHM6GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 40V 8A DO214AB |
|
BYWB29-150-E3/81Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 150V 8A TO263AB |
|
BYT77-TRVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 800V 3A SOD64 |
|
BAV20WS-F2-0000HF |
DIODE GEN PURP 200V 200MA SOD323 |
|
SS39 V6GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 3A 90V DO-214AB |
|
ESH3BHE3_A/HVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 3A DO214AB |
|
BAT85,133Nexperia |
DIODE SCHOTTKY 30V 200MA DO34 |
|
S5D-E3/57TVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 5A DO214AB |
|
FSV10100VSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 100V 10A TO277-3 |
|
BYW32-TRVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 200V 2A SOD57 |
