English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 二极管型: | Schottky |
| 电压 - 直流反向 (vr) (max): | 150 V |
| 电流 - 平均整流 (io): | 20A |
| 电压 - 正向 (vf) (max) @ if: | 1.02 V @ 20 A |
| 速度: | Fast Recovery =< 500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | - |
| 电流 - 反向泄漏@ vr: | 100 µA @ 150 V |
| 电容@vr, f: | - |
| 安装类型: | Surface Mount |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| 供应商设备包: | TO-263AB (D²PAK) |
| 工作温度 - 结: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
STPS5H100SFYSTMicroelectronics |
AUTOMOTIVE 100V LOW IR POWER SCH |
|
HERAF1605G C0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 16A ITO220AC |
|
VS-HFA08SD60SR-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 8A TO252 |
|
S2KA M2GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 800V 1.5A DO214AC |
|
GL41M/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 1A DO213AB |
|
MURA115T3Rochester Electronics |
RECTIFIER DIODE |
|
S1GFSHMXGTSC (Taiwan Semiconductor) |
DIODE, 1A, 400V, AEC-Q101, SOD-1 |
|
MURS360BT3GSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 600V 3A SMB |
|
1N4006GP-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 1A DO204AL |
|
MUR60120B-BPMicro Commercial Components (MCC) |
60A/1200V FRED RECTIFIERS,TO-247 |
|
VS-305URA160Vishay General Semiconductor – Diodes Division |
DIODE GP 1.6KV 330A DO205AB |
|
UPS615/TR13Roving Networks / Microchip Technology |
DIODE SCHOTTKY 15V 6A POWERMITE |
|
UF4007-GComchip Technology |
DIODE GEN PURP 800V 1A DO41 |
