English
简体中文
HC49 10PPM @25C 10PPM (-20 TO 7
DIODE GEN PURP 800V 650A DO200AA
MEMORY MODULE 8GB 240PIN UNBUFF
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 二极管型: | Standard |
| 电压 - 直流反向 (vr) (max): | 800 V |
| 电流 - 平均整流 (io): | 650A |
| 电压 - 正向 (vf) (max) @ if: | 2.08 V @ 1500 A |
| 速度: | Standard Recovery >500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | - |
| 电流 - 反向泄漏@ vr: | 15 mA @ 800 V |
| 电容@vr, f: | - |
| 安装类型: | Clamp On |
| 包/箱: | DO-200AA, A-PUK |
| 供应商设备包: | DO-200AA, A-PUK |
| 工作温度 - 结: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
VS-12FR120Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.2KV 12A DO203AA |
|
GL41G-E3/96Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 1A DO213AB |
|
SF37G R0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 500V 3A DO201AD |
|
RS3D-E3/9ATVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 3A DO214AB |
|
VS-50WQ03FNTR-M3Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 30V 5.5A DPAK |
|
S1MLHRUGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 1000V 1A SUB SMA |
|
ES2B R5GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 2A DO214AA |
|
SS5P4HM3_A/HVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 40V 5A TO277A |
|
B350AQ-13-FZetex Semiconductors (Diodes Inc.) |
SCHOTTKY DIODE SMA T&R 5K |
|
S1DLHR3GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 1A SUB SMA |
|
CES521,L3FToshiba Electronic Devices and Storage Corporation |
DIODE SCHOTTKY 30V 200MA ESC |
|
1SS400CST2RROHM Semiconductor |
DIODE GEN PURP 80V 100MA VMN2 |
|
ES1CLHRVGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 150V 1A SUB SMA |