类型 | 描述 |
---|---|
系列: | - |
包裹: | Bag |
零件状态: | Active |
二极管型: | Standard |
电压 - 直流反向 (vr) (max): | 100 V |
电流 - 平均整流 (io): | 20A |
电压 - 正向 (vf) (max) @ if: | 1.23 V @ 63 A |
速度: | Standard Recovery >500ns, > 200mA (Io) |
反向恢复时间 (trr): | - |
电流 - 反向泄漏@ vr: | 12 mA @ 100 V |
电容@vr, f: | - |
安装类型: | Stud Mount |
包/箱: | DO-203AA, DO-4, Stud |
供应商设备包: | DO-4 |
工作温度 - 结: | -65°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
1N647NTE Electronics, Inc. |
D-SI 400V .4A |
|
S2M-M3/5BTVishay General Semiconductor – Diodes Division |
DIODE GPP 1.5A 1000V DO-214AA |
|
RS07G-M-18Vishay General Semiconductor – Diodes Division |
DIODE GP 400V 500MA DO219AB |
|
VS-8EWL06FN-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 8A TO252AA |
|
JANTXV1N6638Roving Networks / Microchip Technology |
DIODE GEN PURP 125V 300MA AXIAL |
|
MUR160GP-TPMicro Commercial Components (MCC) |
DIODE GEN PURP 600V 1A DO41 |
|
MPG06AHE3_A/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 1A MPG06 |
|
BAS321JXNexperia |
BAS321J/SOD323/SOD2 |
|
SS10P6HM3_A/IVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 60V 7A TO277A |
|
BAT64-06E6327Rochester Electronics |
BAT64 - HIGH SPEED SWITCHING, CL |
|
VS-20CTH03STRL-M3Vishay General Semiconductor – Diodes Division |
DIODE STANDARD 300V 10A TO263AB |
|
SK13B M4GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 30V 1A DO214AA |
|
123SPC080ASMC Diode Solutions |
DIODE SCHOTTKY 80V 120A SPD-3A |