English
简体中文
CAP CER 1200PF 50V C0G/NP0 1210
TVS DIODE 36.8V 59.3V DO204AL
HV DIODE D2.5X6.5 8000V 0.005A
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 二极管型: | Standard |
| 电压 - 直流反向 (vr) (max): | 8000 V |
| 电流 - 平均整流 (io): | 5mA |
| 电压 - 正向 (vf) (max) @ if: | 36 V @ 10 mA |
| 速度: | Small Signal =< 200mA (Io), Any Speed |
| 反向恢复时间 (trr): | 80 ns |
| 电流 - 反向泄漏@ vr: | 2 µA @ 8000 V |
| 电容@vr, f: | - |
| 安装类型: | Through Hole |
| 包/箱: | Axial |
| 供应商设备包: | Axial |
| 工作温度 - 结: | -40°C ~ 120°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
US1G-AQDiotec Semiconductor |
DIODE UFR SMA 400V 1A |
|
P2000GTL-CTDComponents |
CUT-TAPE VERSION. STANDARD RECO |
|
RSFJL RTGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 500MA SUBSMA |
|
ES07B-GS18Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 1.2A DO219AB |
|
NTE5835NTE Electronics, Inc. |
R-200 PRV 3A ANODE CASE |
|
EGL41G/1Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 1A DO213AB |
|
SE10DB-M3/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 3A TO263AC |
|
S2B-E3/52TVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 1.5A DO214AA |
|
S1JLHRUGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 1A SUB SMA |
|
PX1500G-CTDComponents |
CUT-TAPE VERSION. STANDARD RECO |
|
AU3PJHM3_A/HVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 600V 1.7A TO277A |
|
FM1600WRectron USA |
DIODE GEN PURP 1600V 500MA SMX |
|
VS-T70HF120Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 70A D-55 |