TVS DIODE 600W 8V BI-DIRECTIONAL
DIODES SILICON CARBIDE
IC FLASH 1GBIT PARALLEL 64FBGA
BALUN 2.4GHZ-2.5GHZ 0805
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
二极管型: | Silicon Carbide Schottky |
电压 - 直流反向 (vr) (max): | 650 V |
电流 - 平均整流 (io): | 12A (DC) |
电压 - 正向 (vf) (max) @ if: | 1.5 V @ 12 A |
速度: | No Recovery Time > 500mA (Io) |
反向恢复时间 (trr): | 0 ns |
电流 - 反向泄漏@ vr: | 60 µA @ 650 V |
电容@vr, f: | 600pF @ 1V, 1MHz |
安装类型: | Through Hole |
包/箱: | TO-220-2 Full Pack |
供应商设备包: | TO-220FM |
工作温度 - 结: | 175°C (Max) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BAS20-7-FZetex Semiconductors (Diodes Inc.) |
DIODE GP 150V 200MA SOT23-3 |
|
NTE5847NTE Electronics, Inc. |
R-800PRV 3A ANODE CASE |
|
R3000Rectron USA |
DIODE GEN PURP 3000V 200A DO15 |
|
SURS8210T3G-VF01Rochester Electronics |
DIODE GEN PURP 100V 2A SMB |
|
1N4937E-E3/53Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 1A DO204AL |
|
ACDBMT160-HFComchip Technology |
DIODE SCHOTTKY 60V 1A SOD123H |
|
JANTX1N914URRoving Networks / Microchip Technology |
DIODE GEN PURP 75V 200MA DO213AA |
|
S1DFLSanyo Semiconductor/ON Semiconductor |
DIODE GP 200V 1A SOD123F |
|
ES1BHM2GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 1A DO214AC |
|
SR504 A0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 40V 5A DO201AD |
|
VI30100S-M3/4WVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 30A 100V TO-262AA |
|
UF4005HA0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 1A DO204AL |
|
1N6482-E3/97Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 1A DO213AB |