English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Box (TB) |
| 零件状态: | Active |
| 二极管型: | Standard |
| 电压 - 直流反向 (vr) (max): | 50 V |
| 电流 - 平均整流 (io): | 1.5A |
| 电压 - 正向 (vf) (max) @ if: | 1.3 V @ 1.5 A |
| 速度: | Fast Recovery =< 500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | 150 ns |
| 电流 - 反向泄漏@ vr: | 5 µA @ 35 V |
| 电容@vr, f: | 25pF @ 4V, 1MHz |
| 安装类型: | Through Hole |
| 包/箱: | DO-204AC, DO-15, Axial |
| 供应商设备包: | DO-15 |
| 工作温度 - 结: | -65°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BAS716FNexperia |
DIODE GEN PURP 75V 200MA SOD523 |
|
1N5406RLGRochester Electronics |
RECTIFIER DIODE, 3A, 600V |
|
BYC30X-600P,127WeEn Semiconductors Co., Ltd |
DIODE GEN PURP 600V 30A TO220F |
|
ESH1DHM3_A/HVishay General Semiconductor – Diodes Division |
1A 200V SM ULTRAFAST RECT SMA |
|
VS-SD1100C08LVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 1170A B-43 |
|
1N5406T-GComchip Technology |
DIODE GEN PURP 600V 3A DO201AD |
|
MUR4L20 B0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 4A DO201AD |
|
BAS7002WH6327Rochester Electronics |
RECTIFIER DIODE, SCHOTTKY |
|
GL41KHE3/97Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 1A DO213AB |
|
ISL9R1560G2-F085Rochester Electronics |
RECTIFIER DIODE, AVALANCHE, 15A, |
|
CSFA105-GComchip Technology |
DIODE GEN PURP 600V 1A DO214AC |
|
MBR10100GSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 100V 10A TO220-2 |
|
DFLS140L-7Zetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY 40V 1A POWERDI123 |
