类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
二极管型: | Standard |
电压 - 直流反向 (vr) (max): | 400 V |
电流 - 平均整流 (io): | 3A |
电压 - 正向 (vf) (max) @ if: | 1.15 V @ 3 A |
速度: | Standard Recovery >500ns, > 200mA (Io) |
反向恢复时间 (trr): | - |
电流 - 反向泄漏@ vr: | 10 µA @ 400 V |
电容@vr, f: | 40pF @ 4V, 1MHz |
安装类型: | Surface Mount |
包/箱: | DO-214AB, SMC |
供应商设备包: | SMC |
工作温度 - 结: | -65°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
RS1J-E3/61TVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 1A DO214AC |
|
FESB16BTHE3/81Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 16A TO263AB |
|
VS-15ETL06FP-N3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 15A TO220FP |
|
AS1PD-M3/84AVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 200V 1.5A DO220 |
|
SBT1845-3GDiotec Semiconductor |
SCHOTTKY TO-220AC 45V 18A |
|
NTE5855NTE Electronics, Inc. |
R-200PRV 6A ANODE CASE |
|
ES2A-E3/5BTVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 2A DO214AA |
|
AS3PJHM3_A/IVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 600V 2.1A TO277A |
|
2A05GHR0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 2A DO204AC |
|
USD245CRHR2Roving Networks / Microchip Technology |
RECTIFIER |
|
NRVBB1060T4GSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 60V 10A D2PAK |
|
STD5100TRSMC Diode Solutions |
DIODE SCHOTTKY 100V DPAK |
|
ESJLW RQGTSC (Taiwan Semiconductor) |
DIODE, SUPER FAST |