English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101, eSMP®, TMBS® |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 二极管型: | Schottky |
| 电压 - 直流反向 (vr) (max): | 120 V |
| 电流 - 平均整流 (io): | 15A |
| 电压 - 正向 (vf) (max) @ if: | 810 mV @ 15 A |
| 速度: | Fast Recovery =< 500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | - |
| 电流 - 反向泄漏@ vr: | 1 mA @ 120 V |
| 电容@vr, f: | - |
| 安装类型: | Surface Mount |
| 包/箱: | TO-277, 3-PowerDFN |
| 供应商设备包: | TO-277A (SMPC) |
| 工作温度 - 结: | -40°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SD101AWS-E3-18Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 150MW 60V SOD323 |
|
MBRB10100-E3/4WVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 100V 10A TO263AB |
|
BYM36E-TRVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 1KV 1.5A SOD64 |
|
FESB8DTHE3/81Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 8A TO263AB |
|
EGP10G-E3/53Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 1A DO204AL |
|
RHRD660S9A-F085Sanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 600V 6A TO252-3 |
|
1N5402NTE Electronics, Inc. |
R-200 PRV 3A |
|
IDWD15G120C5XKSA1IR (Infineon Technologies) |
SIC SCHOTTKY 1200V 15A TO247-2 |
|
CDLL0.2A30Roving Networks / Microchip Technology |
DIODE SCHOTTKY 30V 200MA DO213AA |
|
SK15BHR5GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 50V 1A DO214AA |
|
BAT64-05B5003Rochester Electronics |
RECTIFIER DIODE, SCHOTTKY |
|
BYV25D-600,118WeEn Semiconductors Co., Ltd |
DIODE GEN PURP 600V 5A DPAK |
|
1N5417USRoving Networks / Microchip Technology |
DIODE GEN PURP 200V 3A D5B |
