0.08UH, 20%, 1MOHM, 22AMP MAX. S
DIODE SIC 3A 650V TO-252/DPAK
IC OPAMP DIFF 2 CIRCUIT 14SOIC
IC DRAM 128MBIT PAR 66TSOP II
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
二极管型: | Silicon Carbide Schottky |
电压 - 直流反向 (vr) (max): | 650 V |
电流 - 平均整流 (io): | 11A (DC) |
电压 - 正向 (vf) (max) @ if: | 1.7 V @ 3 A |
速度: | No Recovery Time > 500mA (Io) |
反向恢复时间 (trr): | 0 ns |
电流 - 反向泄漏@ vr: | 100 µA @ 650 V |
电容@vr, f: | 181pF @ 0V, 1MHz |
安装类型: | Surface Mount |
包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
供应商设备包: | D-PAK (TO-252) |
工作温度 - 结: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
1N6480-E3/96Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 1A DO213AB |
![]() |
BAV20WS RRGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 200MA SOD323 |
![]() |
S1MHM2GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 1000V 1A DO214AC |
![]() |
BAS70-05235Rochester Electronics |
NOW NEXPERIA BAS70-05 - RECTIFIE |
![]() |
V10PN50-M3/87AVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 50V 5.3A TO277A |
![]() |
RFN2LAM6STRROHM Semiconductor |
DIODE GEN PURP 600V 1.5A PMDTM |
![]() |
V3PM12HM3/HVishay General Semiconductor – Diodes Division |
SCHOTTKY RECTIFIER 3A 120V SMP |
![]() |
RB540SM-40FHT2RROHM Semiconductor |
RB540SM-40FH IS THE HIGH RELIABI |
![]() |
CSFC305-GComchip Technology |
DIODE GEN PURP 600V 3A DO214AB |
![]() |
SBAS16WT1GSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 75V 200MA SC70 |
![]() |
RGF1MSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 1000V 1A SMA |
![]() |
1N4005GP-AQ-CTDComponents |
CUT-TAPE VERSION. STANDARD RECO |
![]() |
GP10JE-E3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 1A DO204AL |