English
简体中文
CERAMIC CHIP INDUCTOR,300NH
SOCKET 4PAD 3.2X2.5 CRYSTAL
HV DIODE DO-41 1500V 0.5A
CONN BACKSHELL 25P 90/180DEG GRY
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 二极管型: | Standard |
| 电压 - 直流反向 (vr) (max): | 1500 V |
| 电流 - 平均整流 (io): | 500mA |
| 电压 - 正向 (vf) (max) @ if: | 3 V @ 500 mA |
| 速度: | Fast Recovery =< 500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | 400 ns |
| 电流 - 反向泄漏@ vr: | 3 µA @ 1500 V |
| 电容@vr, f: | - |
| 安装类型: | Through Hole |
| 包/箱: | DO-204AC, DO-41, Axial |
| 供应商设备包: | DO-41/DO-204AC |
| 工作温度 - 结: | -50°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
90SQ040SMC Diode Solutions |
DIODE SCHOTTKY 40V 9A DO201AD |
|
VS-8EWH02FN-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 8A TO252 |
|
SB140E-GComchip Technology |
DIODE SCHOTTKY 40V 1A DO41 |
|
SS1FN6-M3/HVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 60V 1A DO219AB |
|
RHRU50120Rochester Electronics |
RECTIFIER DIODE |
|
VS-10ETF06-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 10A TO220AC |
|
S1DB R5GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 1A DO214AA |
|
SK33BHR5GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 30V 3A DO214AA |
|
HS5F V6GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 300V 5A DO214AB |
|
ER1D-LTPMicro Commercial Components (MCC) |
DIODE GEN PURP 200V 1A DO214AA |
|
STPS130AFNSTMicroelectronics |
30 V, 1 A POWER SCHOTTKY RECTIFI |
|
SRL1G-CTDComponents |
CUT-TAPE VERSION. STANDARD RECO |
|
RS1A-M3/5ATVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 1A DO214AC |