类型 | 描述 |
---|---|
系列: | - |
包裹: | Cut Tape (CT)Tape & Box (TB) |
零件状态: | Active |
二极管型: | Standard |
电压 - 直流反向 (vr) (max): | 100 V |
电流 - 平均整流 (io): | 3.5A |
电压 - 正向 (vf) (max) @ if: | 1.1 V @ 3.5 A |
速度: | Fast Recovery =< 500ns, > 200mA (Io) |
反向恢复时间 (trr): | 20 ns |
电流 - 反向泄漏@ vr: | 5 µA @ 100 V |
电容@vr, f: | 20pF @ 4V, 1MHz |
安装类型: | Through Hole |
包/箱: | DO-201AD, Axial |
供应商设备包: | DO-201AD |
工作温度 - 结: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SE07PD-M3/85AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 700MA DO220 |
|
SBR3U40S1FQ-7Zetex Semiconductors (Diodes Inc.) |
DIODE SBR 40V 3A SOD123F |
|
HS1FL R3GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 300V 1A SUB SMA |
|
HS3G R7GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 3A DO214AB |
|
SD103BW-G3-08Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 350MA 30V SOD123 |
|
SFAF808G C0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 8A ITO220AC |
|
GP3D040A065USemiQ |
SIC SCHOTTKY DIODE 650V TO247-3 |
|
TBAT54,LMToshiba Electronic Devices and Storage Corporation |
DIODE SCHOTTKY 30V 140MA SOT23 |
|
S1MHE3_A/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 1A DO214AC |
|
CD214B-S3GJ.W. Miller / Bourns |
DIO RECT |
|
MUR460HB0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 4A DO201AD |
|
UF1005-E3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 1A DO204AL |
|
RS1D-13-FZetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 200V 1A SMA |