English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Strip |
| 零件状态: | Active |
| 二极管型: | Standard |
| 电压 - 直流反向 (vr) (max): | 50 V |
| 电流 - 平均整流 (io): | 5A |
| 电压 - 正向 (vf) (max) @ if: | 1 V @ 5 A |
| 速度: | Standard Recovery >500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | 1.5 µs |
| 电流 - 反向泄漏@ vr: | 5 µA @ 50 V |
| 电容@vr, f: | - |
| 安装类型: | Through Hole |
| 包/箱: | DO-201AA, DO-27, Axial |
| 供应商设备包: | DO-201 |
| 工作温度 - 结: | -50°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
VS-6ESH02HM3/86AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 6A TO277A |
|
VS-8EWF06STR-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 8A D-PAK |
|
SB2G-M3/52TVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 2A DO214AA |
|
BAS70 RFGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 70V 70MA SOT-23 |
|
BYG10M-E3/TRVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 1KV 1.5A |
|
STTH1512PISTMicroelectronics |
DIODE GEN PURP 1.2KV 15A DOP3I |
|
PMEG120G30ELPXNexperia |
PMEG120G30ELP/SOD128/FLATPOWER |
|
CDBM1100-GComchip Technology |
DIODE SCHOTTKY 100V 1A MINISMA |
|
MBR16100HC0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 100V 16A TO220AC |
|
1N4938UR-1Roving Networks / Microchip Technology |
DIODE GEN PURP 175V 100MA DO213 |
|
EM513-AQDiotec Semiconductor |
DIODE STD DO-41 1600V 1A |
|
NTE5821NTE Electronics, Inc. |
R-400 PRV 12A ANODE CASE |
|
CMR1-04M BK PBFREECentral Semiconductor |
DIODE GEN PURP 400V 1A SMA |
