类型 | 描述 |
---|---|
系列: | - |
包裹: | Bag |
零件状态: | Active |
二极管型: | Standard |
电压 - 直流反向 (vr) (max): | 100 V |
电流 - 平均整流 (io): | 6A |
电压 - 正向 (vf) (max) @ if: | 1 V @ 6 A |
速度: | Standard Recovery >500ns, > 200mA (Io) |
反向恢复时间 (trr): | - |
电流 - 反向泄漏@ vr: | 5 µA @ 100 V |
电容@vr, f: | 150pF @ 4V, 1MHz |
安装类型: | Through Hole |
包/箱: | Axial |
供应商设备包: | Axial |
工作温度 - 结: | -50°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
VS-20ETF10STRL-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 20A TO263AB |
|
BA158G R0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 1A DO204AL |
|
S1KLWHRVGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 800V 1A SOD123W |
|
SS32HR7GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 20V 3A DO214AB |
|
NDSH25170ASanyo Semiconductor/ON Semiconductor |
SIC JBS 1700V 25A TO247 |
|
1N5392-E3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 1.5A DO204AL |
|
BAS21GWXNexperia |
DIODE GEN PURP 200V 225MA SOD123 |
|
PMEG40T10ERXNexperia |
DIODE SCHOTTKY 40V 1A SOD123W |
|
1N459Rochester Electronics |
GLASS PACKAGE LOW LEAKAGE DIODE |
|
CDBF54-HFComchip Technology |
DIODE SCHOTTKY 30V 200MA 1005 |
|
MBRH20020RGeneSiC Semiconductor |
DIODE SCHOTTKY 20V 200A D-67 |
|
NSR201MXT5GSanyo Semiconductor/ON Semiconductor |
RF SCHOTTKY BARRIER DIODE |
|
CDBER0140RComchip Technology |
DIODE SCHOTTKY 40V 100MA 0503 |