English
简体中文
RES CHAS MNT 13.3 OHM 1% 10W
CAP CER 39PF 63V C0G/NP0 2220
DIODE SCHOTTKY 40V 3A SOD123W
IC CHIP
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 二极管型: | Schottky |
| 电压 - 直流反向 (vr) (max): | 40 V |
| 电流 - 平均整流 (io): | 3A |
| 电压 - 正向 (vf) (max) @ if: | 540 mV @ 3 A |
| 速度: | Fast Recovery =< 500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | - |
| 电流 - 反向泄漏@ vr: | 100 µA @ 40 V |
| 电容@vr, f: | 250pF @ 1V, 1MHz |
| 安装类型: | Surface Mount |
| 包/箱: | SOD-123W |
| 供应商设备包: | CFP3 |
| 工作温度 - 结: | 150°C (Max) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SBYV27-100-E3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 2A DO204AC |
|
IDH03SG60CXKSA2IR (Infineon Technologies) |
DIODE SCHOTTKY 600V 3A TO220-2 |
|
MBR760-E3/45Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 60V 7.5A TO220AC |
|
ES1GLW RVGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 1A SOD123W |
|
IDW100E60Rochester Electronics |
IDW100E60 - SILICON POWER DIODE |
|
VS-8EWF12STR-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.2KV 8A D-PAK |
|
SK53L-TPMicro Commercial Components (MCC) |
DIODE SCHOTTKY 30V 5A DO214AB |
|
S1YDiotec Semiconductor |
DIODE STD SMA 2000V 1A |
|
PX1500MDiotec Semiconductor |
DIODE STD D8X7.5 1000V 15A |
|
SL36BSURGE |
3A -60V - SMB (DO-214AA) - RECTI |
|
MCL101B-TRVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 50V 30MA MICROMLF |
|
VS-HFA30PB120-N3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.2KV 30A TO247AC |
|
SF22G A0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 2A DO204AC |