类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
二极管型: | Standard |
电压 - 直流反向 (vr) (max): | 2800 V |
电流 - 平均整流 (io): | 920A |
电压 - 正向 (vf) (max) @ if: | 2.26 V @ 1500 A |
速度: | Standard Recovery >500ns, > 200mA (Io) |
反向恢复时间 (trr): | 3 µs |
电流 - 反向泄漏@ vr: | - |
电容@vr, f: | - |
安装类型: | Clamp On |
包/箱: | DO-200AB, B-PUK |
供应商设备包: | DO-200AB, B-PUK |
工作温度 - 结: | -40°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
ES3KB-F1-3000HF |
DIODE GEN PURP 800V 3A DO214AA |
|
FESF16CTHE3/45Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 150V 16A ITO220AC |
|
CD214A-B320LRJ.W. Miller / Bourns |
DIO SBD VRRM 20V 3A SMA |
|
VS-25ETS12SLHM3Vishay General Semiconductor – Diodes Division |
DIODES - D2PAK-E3 |
|
VS-ETL1506SHM3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 15A TO263AB |
|
VS-E4PU6006LHN3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 60A TO247AD |
|
NRVTS12100EMFST3GSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 100V 12A 5DFN |
|
FR40KR05GeneSiC Semiconductor |
DIODE GEN PURP REV 800V 40A DO5 |
|
BYG10D-E3/TRVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 200V 1.5A |
|
BYT52D-TAPVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 200V 1.4A SOD57 |
|
BAS116,215Nexperia |
DIODE GEN PURP 75V 215MA SOT23 |
|
SS36LHRUGTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 60V 3A SUB SMA |
|
RS2GAL M3GTSC (Taiwan Semiconductor) |
150NS, 2A, 400V, FAST RECOVERY R |