类型 | 描述 |
---|---|
系列: | - |
包裹: | Strip |
零件状态: | Active |
二极管型: | Standard |
电压 - 直流反向 (vr) (max): | 200 V |
电流 - 平均整流 (io): | 25A |
电压 - 正向 (vf) (max) @ if: | 1.1 V @ 25 A |
速度: | Standard Recovery >500ns, > 200mA (Io) |
反向恢复时间 (trr): | 1.5 µs |
电流 - 反向泄漏@ vr: | 10 µA @ 200 V |
电容@vr, f: | - |
安装类型: | Through Hole |
包/箱: | P600, Axial |
供应商设备包: | P600 |
工作温度 - 结: | -50°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
RBR2LAM60ATFTRROHM Semiconductor |
AUTOMOTIVE SCHOTTKY BARRIER DIOD |
|
S1DL RUGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 1A SUB SMA |
|
S5GBHR5GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 5A DO214AA |
|
RMPG06DHE3_A/53Vishay General Semiconductor – Diodes Division |
DIODE GPP 1A 200V 150NS MPG06 |
|
RS3D-13-FZetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 200V 3A SMC |
|
V8PM12-M3/86AVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 8A 120V TO-277A |
|
GSD2004WS-G3-18Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 240V 225MA SOD323 |
|
V10PM12HM3_A/IVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 120V 3.9A TO277A |
|
SD101CW-G3-18Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 50V 30MA SOD123 |
|
SES1DTRSMC Diode Solutions |
UF RECOVERY RECTIFIER 200V SMA |
|
BAS316WSDComponents |
DIODE GEN PURP 100V 250MA SOD323 |
|
HS2JFS M3GTSC (Taiwan Semiconductor) |
75NS, 2A, 600V, HIGH EFFICIENT R |
|
SB330-E3/54Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 30V 3A DO201AD |