类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
二极管型: | Schottky |
电压 - 直流反向 (vr) (max): | 150 V |
电流 - 平均整流 (io): | 3A |
电压 - 正向 (vf) (max) @ if: | 820 mV @ 3 A |
速度: | Fast Recovery =< 500ns, > 200mA (Io) |
反向恢复时间 (trr): | - |
电流 - 反向泄漏@ vr: | 2 µA @ 150 V |
电容@vr, f: | - |
安装类型: | Through Hole |
包/箱: | DO-201AD, Axial |
供应商设备包: | DO-201AD |
工作温度 - 结: | 175°C (Max) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
VS-8ETL06STRLHM3Vishay General Semiconductor – Diodes Division |
FREDS - D2PAK |
|
UG4C-E3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 150V 4A DO201AD |
|
VSS8D2M12-M3/HVishay General Semiconductor – Diodes Division |
2A, 120V, SLIMSMAW TRENCH SKY RE |
|
VS-1N3766RVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 35A DO203AB |
|
STPS3H100AFSTMicroelectronics |
DIODE SCHOTTKY 100V 3A SOD128 |
|
M2Diotec Semiconductor |
DIODE STD SMA 100V 1A |
|
ES3DHE3J_A/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 3A DO214AB |
|
STPSC8H065DLFSTMicroelectronics |
SILICON CARBIDE DIODES |
|
BYW53-TAPVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 400V 2A SOD57 |
|
SS29HM4GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 90V 2A DO214AA |
|
S15DLWHRVGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 1.5A SOD123W |
|
VS-10ETF06FP-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 10A TO220FP |
|
NTE6122NTE Electronics, Inc. |
R-1600V 2200A |