English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 二极管型: | Schottky |
| 电压 - 直流反向 (vr) (max): | 50 V |
| 电流 - 平均整流 (io): | 3A |
| 电压 - 正向 (vf) (max) @ if: | 750 mV @ 3 A |
| 速度: | Fast Recovery =< 500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | - |
| 电流 - 反向泄漏@ vr: | 500 µA @ 50 V |
| 电容@vr, f: | - |
| 安装类型: | Surface Mount |
| 包/箱: | DO-214AB, SMC |
| 供应商设备包: | DO-214AB (SMC) |
| 工作温度 - 结: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
VS-20TQ045STRLHM3Vishay General Semiconductor – Diodes Division |
SCHOTTKY - D2PAK |
|
CUS15S30,H3FToshiba Electronic Devices and Storage Corporation |
DIODE SCHOTTKY 30V 1.5A |
|
SS25L RQGTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 50V 2A SUB SMA |
|
ES1LD M2GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 1A DO214AC |
|
MMBD914-G3-18Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 200MA SOT23 |
|
HSM845JE3/TR13Roving Networks / Microchip Technology |
DIODE SCHOTTKY 45V 8A DO214AB |
|
CDLL3600Roving Networks / Microchip Technology |
DIODE GEN PURP 50V 300MA DO213AA |
|
APT30DQ100BGRoving Networks / Microchip Technology |
DIODE GEN PURP 1KV 30A TO247 |
|
UJ3D06504TSUnitedSiC |
650V 4A SIC SCHOTTKY DIODE G3, T |
|
UGF8BTHE3/45Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 8A ITO220AC |
|
IDH10G65C5XKSA1Rochester Electronics |
RECTIFIER DIODE, SCHOTTKY, 1 PHA |
|
VS-20TQ040-M3Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 20A TO-220 |
|
ESH2BHE3_A/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 2A DO214AA |
