类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
二极管型: | Standard |
电压 - 直流反向 (vr) (max): | 400 V |
电流 - 平均整流 (io): | 60A |
电压 - 正向 (vf) (max) @ if: | 1.5 V @ 60 A |
速度: | Fast Recovery =< 500ns, > 200mA (Io) |
反向恢复时间 (trr): | 37 ns |
电流 - 反向泄漏@ vr: | 250 µA @ 400 V |
电容@vr, f: | - |
安装类型: | Through Hole |
包/箱: | TO-247-2 |
供应商设备包: | TO-247 [B] |
工作温度 - 结: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
B0540WS-7Zetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY 40V 500MA SOD323 |
|
MBRF1045-E3/45Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 45V 10A ITO220AC |
|
EGL1BDiotec Semiconductor |
DIODE SFR DO-213AA 100V 1A |
|
GF1J-E3/67AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 1A DO214BA |
|
BYV38-TRVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 1KV 2A SOD57 |
|
ES2GAHM2GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 2A DO214AC |
|
ACGRAT105-HFComchip Technology |
DIODE GEN PURP 1KV 1A 2010 |
|
NTE5819NTE Electronics, Inc. |
R-200 PRV 12A ANODE CASE |
|
SD103CW-HE3-08Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 350MA 20V SOD123 |
|
FR157GHR0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 1.5A DO204AC |
|
BYP35K4Diotec Semiconductor |
DIODE STD D13X10.7W 400V 35A |
|
S07B-M-18Vishay General Semiconductor – Diodes Division |
DIODE GP 100V 700MA DO219AB |
|
EGL34C-E3/83Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 150V 500MA DO213 |