English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 二极管型: | Standard |
| 电压 - 直流反向 (vr) (max): | 600 V |
| 电流 - 平均整流 (io): | 1A |
| 电压 - 正向 (vf) (max) @ if: | 1.3 V @ 1 A |
| 速度: | Fast Recovery =< 500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | 250 ns |
| 电流 - 反向泄漏@ vr: | 5 µA @ 600 V |
| 电容@vr, f: | 8pF @ 4V, 1MHz |
| 安装类型: | Through Hole |
| 包/箱: | DO-204AL, DO-41, Axial |
| 供应商设备包: | DO-41 |
| 工作温度 - 结: | -65°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
HER301G A0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 50V 3A DO201AD |
|
D3D7-FDH6308CRochester Electronics |
SMALL SIGNAL DIODE |
|
HS2DA R3GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 1.5A DO214AC |
|
SDT8A100P5-7Zetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY 100V 8A POWERDI 5 |
|
FR85JR02GeneSiC Semiconductor |
DIODE GEN PURP REV 600V 85A DO5 |
|
V8P12-M3/86AVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 8A 120V TO-277A |
|
HS2FSURGE |
1.5A -300V - SMB (DO-214AA) - RE |
|
VS-HFA16PB120HN3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.2KV 16A TO247AC |
|
CDBA1150-HFComchip Technology |
DIODE SCHOTTKY 150V 1A DO214AC |
|
US1J-M3/5ATVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 1A DO214AC |
|
BYW27-1000Diotec Semiconductor |
DIODE STD DO-41 1000V 1A |
|
VS-8ETU04SHM3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 8A TO263AB |
|
SS0503EC-TR-HRochester Electronics |
DIODE SCHOTTKY 30V 500MA 2ECSP |
