类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
二极管型: | Schottky |
电压 - 直流反向 (vr) (max): | 60 V |
电流 - 平均整流 (io): | 5.5A |
电压 - 正向 (vf) (max) @ if: | 570 mV @ 5 A |
速度: | Fast Recovery =< 500ns, > 200mA (Io) |
反向恢复时间 (trr): | - |
电流 - 反向泄漏@ vr: | 3 mA @ 60 V |
电容@vr, f: | 360pF @ 5V, 1MHz |
安装类型: | Surface Mount |
包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
供应商设备包: | D-PAK (TO-252AA) |
工作温度 - 结: | -40°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BYW27-1000-CTDComponents |
CUT-TAPE VERSION. STANDARD RECO |
|
V20DL45HM3_A/IVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 45V 20A TO263AC |
|
PMEG4002EJ,115Nexperia |
DIODE SCHOTTKY 40V 200MA SOD323F |
|
STTH60RQ06WLSTMicroelectronics |
600 V, 60 A TURBO 2 SOFT ULTRAFA |
|
AU3PJ-M3/86AVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 600V 1.7A TO277A |
|
BYG10Y-E3/TR3Vishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 1.6KV 1.5A |
|
VS-E5PX7506L-N3Vishay General Semiconductor – Diodes Division |
75A, 600V, "X" SERIES FRED PT IN |
|
1N4454UR-1Roving Networks / Microchip Technology |
DIODE GEN PURP 50V 200MA DO213AA |
|
ESJLW RVGTSC (Taiwan Semiconductor) |
DIODE, SUPER FAST |
|
SBRT20M80SP5-13Zetex Semiconductors (Diodes Inc.) |
DIODE SBR 80V 20A POWERDI5 |
|
BYX84TAPVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 600V 2A SOD57 |
|
BY458TAPVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 1.2KV 2A SOD57 |
|
ES07B-GS08Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 500MA DO219 |