English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 二极管型: | Silicon Carbide Schottky |
| 电压 - 直流反向 (vr) (max): | 1.2 V |
| 电流 - 平均整流 (io): | 20A |
| 电压 - 正向 (vf) (max) @ if: | 1.75 V @ 20 A |
| 速度: | No Recovery Time > 500mA (Io) |
| 反向恢复时间 (trr): | 0 ns |
| 电流 - 反向泄漏@ vr: | 200 µA @ 1.2 V |
| 电容@vr, f: | 1220pF @ 1V, 100KHz |
| 安装类型: | Through Hole |
| 包/箱: | TO-220-2 |
| 供应商设备包: | TO-220-2L |
| 工作温度 - 结: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
1N4003E-E3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 1A DO204AL |
|
S8KC-13Zetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 800V 8A SMC |
|
VS-1N3765Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 700V 35A DO203AB |
|
SS16HESanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 60V 1A SOD323HE |
|
VS-15ETL06STRR-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 15A TO263AB |
|
BYV28-600-TAPVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 600V 3.5A SOD64 |
|
ES2JSURGE |
2A -600V - SMB (DO-214AA) - RECT |
|
FR101G R0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 50V 1A DO204AL |
|
D1461S45TXPSA1IR (Infineon Technologies) |
DIODE GEN PURP D10026K-1 |
|
RS1MB-13-FZetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 1KV 1A SMB |
|
BY255-CTDComponents |
CUT-TAPE VERSION. STANDARD RECO |
|
VSSA210-E3/5ATVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 100V 1.7A DO214AC |
|
STTH3R02SSTMicroelectronics |
DIODE GEN PURP 200V 3A SMC |
