DIODE SCHOTTKY 16A 35V TO-220AC
BLK 48 MM X 54.8M
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
二极管型: | Schottky |
电压 - 直流反向 (vr) (max): | 35 V |
电流 - 平均整流 (io): | 16A |
电压 - 正向 (vf) (max) @ if: | 630 mV @ 16 A |
速度: | Fast Recovery =< 500ns, > 200mA (Io) |
反向恢复时间 (trr): | - |
电流 - 反向泄漏@ vr: | 200 µA @ 35 V |
电容@vr, f: | 1400pF @ 5V, 1MHz |
安装类型: | Through Hole |
包/箱: | TO-220-2 |
供应商设备包: | TO-220AC |
工作温度 - 结: | -65°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
1N4007G R0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 1A DO204AL |
|
S2M-AQDiotec Semiconductor |
DIODE STD SMB 1000V 2A |
|
RB160VYM-40FHTRROHM Semiconductor |
SCHOTTKY BARRIER DIODE (AEC-Q101 |
|
LXA15T600Power Integrations |
DIODE GEN PURP 600V 15A TO220AC |
|
S2GFS M3GTSC (Taiwan Semiconductor) |
2A, 400V, STANDARD RECOVERY RECT |
|
GIB1404HE3/45Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 8A TO263AB |
|
S10JC V6GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 10A DO214AB |
|
RSFDL RQGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 500MA SUBSMA |
|
SJPB-D6VRSanken Electric Co., Ltd. |
DIODE SCHOTTKY 60V 1A SJP |
|
AU2PMHM3_A/IVishay General Semiconductor – Diodes Division |
DIODE AVALANCH 1KV 1.3A TO277A |
|
BYM12-400-E3/97Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 1A DO213AB |
|
RS2KFS M3GTSC (Taiwan Semiconductor) |
500NS, 2A, 800V, FAST RECOVERY R |
|
BYC8DX-600,127Rochester Electronics |
NOW WEEN - BYC8DX-600 - HYPERFAS |