650V 6A SIC SBD
SWITCH ROCKER DPDT 5A 120V
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
二极管型: | Silicon Carbide Schottky |
电压 - 直流反向 (vr) (max): | 650 V |
电流 - 平均整流 (io): | 8A (DC) |
电压 - 正向 (vf) (max) @ if: | 1.75 V @ 6 A |
速度: | No Recovery Time > 500mA (Io) |
反向恢复时间 (trr): | 0 ns |
电流 - 反向泄漏@ vr: | 200 µA @ 650 V |
电容@vr, f: | 365pF @ 1V, 100kHz |
安装类型: | Surface Mount |
包/箱: | 4-PowerTSFN |
供应商设备包: | 4-PQFN (8x8) |
工作温度 - 结: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
SS3P4HM3J/84AVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 3A 40V DO-220AA |
![]() |
120NQ035-1SMC Diode Solutions |
DIODE SCHOTTKY 35V 120A PRM1-1 |
![]() |
DSB1A20Roving Networks / Microchip Technology |
DIODE SCHOTTKY 20V 1A DO204AL |
![]() |
MBR160RLGSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 60V 1A AXIAL |
![]() |
1N1200AGeneSiC Semiconductor |
DIODE GEN PURP 100V 12A DO4 |
![]() |
VS-SD1500C25LVishay General Semiconductor – Diodes Division |
DIODE GP 2.5KV 1600A DO200AB |
![]() |
MPG06JHE3_A/53Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 1A MPG06 |
![]() |
ESGLW RVGTSC (Taiwan Semiconductor) |
DIODE, SUPER FAST |
![]() |
STPSC20065DSTMicroelectronics |
DIODE SCHOTTKY 650V 20A TO220AC |
![]() |
VS-3EJH02-M3/6BVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 3A DO221AC |
![]() |
BAV21,133Nexperia |
DIODE GEN PURP 200V 250MA ALF2 |
![]() |
MSC030SDA120KRoving Networks / Microchip Technology |
UNRLS, FG, GEN2, SIC SBD, TO-220 |
![]() |
MMBD4448WT-TPMicro Commercial Components (MCC) |
DIODE GEN PURP 75V 250MA SOT323 |