类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Box (TB) |
零件状态: | Active |
二极管型: | Standard |
电压 - 直流反向 (vr) (max): | 800 V |
电流 - 平均整流 (io): | 2A |
电压 - 正向 (vf) (max) @ if: | 1.7 V @ 2 A |
速度: | Fast Recovery =< 500ns, > 200mA (Io) |
反向恢复时间 (trr): | 75 ns |
电流 - 反向泄漏@ vr: | 5 µA @ 800 V |
电容@vr, f: | 20pF @ 4V, 1MHz |
安装类型: | Through Hole |
包/箱: | DO-204AC, DO-15, Axial |
供应商设备包: | DO-204AC (DO-15) |
工作温度 - 结: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NTE558NTE Electronics, Inc. |
R-SI 1500V 1A |
|
SF38GHR0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 3A DO201AD |
|
UHF8JT-E3/45Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 8A ITO220AC |
|
VS-ETU1506FP-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 15A TO220FP |
|
1N4151W-G3-08Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 150MA SOD123 |
|
VS-25F120Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.2KV 25A DO203AA |
|
HER103G R0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 1A DO204AL |
|
V15P10HM3/IVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 100V 15A TO277A |
|
VS-300U40AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 300A DO205AB |
|
BAS19-E3-18Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 200MA SOT23 |
|
ES2D R5GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 2A DO214AA |
|
P600K-CTDComponents |
CUT-TAPE VERSION. STANDARD RECO |
|
SF45GHA0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 300V 4A DO201AD |