RES 2.2 OHM 1/2W 1% AXIAL
R-300 PRV 40A CATH CASE
IC SRAM 2MBIT PARALLEL 44TSOP II
FERRITE BEAD 75 OHM 0603 1LN
类型 | 描述 |
---|---|
系列: | - |
包裹: | Bag |
零件状态: | Active |
二极管型: | Standard |
电压 - 直流反向 (vr) (max): | 300 V |
电流 - 平均整流 (io): | 40A |
电压 - 正向 (vf) (max) @ if: | 1.3 V @ 40 A |
速度: | Standard Recovery >500ns, > 200mA (Io) |
反向恢复时间 (trr): | - |
电流 - 反向泄漏@ vr: | 15 mA @ 300 V |
电容@vr, f: | - |
安装类型: | Stud Mount |
包/箱: | DO-203AA, DO-5, Stud |
供应商设备包: | DO-5 |
工作温度 - 结: | -65°C ~ 190°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
STTH3L06SSTMicroelectronics |
DIODE GEN PURP 600V 3A SMC |
|
PPS560Diotec Semiconductor |
SCHOTTKY TO-277B 60V 5A |
|
S1K-M3/5ATVishay General Semiconductor – Diodes Division |
DIODE GPP 1A 800V DO-214AC |
|
RS1BFARochester Electronics |
RECTIFIER DIODE, 0.8A, 100V |
|
MUR120S M4GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 1A DO214AA |
|
CDBB1100-GComchip Technology |
DIODE SCHOTTKY 100V 1A DO214AA |
|
SS3H9-E3/9ATVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 90V 3A DO214AB |
|
UGS5JHMNGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 5A TO263AB |
|
IDH08G65C5XKSA2IR (Infineon Technologies) |
DIODE SCHOTTKY 650V 8A TO220-2-1 |
|
MMBD914-TPMicro Commercial Components (MCC) |
DIODE GEN PURP 75V 150MA SOT23 |
|
S1JLHRTGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 1A SUB SMA |
|
TSP10U60S S1GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 60V 10A TO277A |
|
BAT54WS-TPMicro Commercial Components (MCC) |
DIODE SCHOTTKY 30V 200MA SOD323 |