类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Box (TB) |
零件状态: | Active |
二极管型: | Standard |
电压 - 直流反向 (vr) (max): | 100 V |
电流 - 平均整流 (io): | 1A |
电压 - 正向 (vf) (max) @ if: | 1.3 V @ 1 A |
速度: | Fast Recovery =< 500ns, > 200mA (Io) |
反向恢复时间 (trr): | 150 ns |
电流 - 反向泄漏@ vr: | 5 µA @ 70 V |
电容@vr, f: | 15pF @ 4V, 1MHz |
安装类型: | Through Hole |
包/箱: | DO-204AL, DO-41, Axial |
供应商设备包: | DO-41 |
工作温度 - 结: | -65°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
UF5406-E3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 3A DO201AD |
|
PMEG3005EGWXNexperia |
DIODE SCHOTTKY 30V 500MA SOD123 |
|
BAV101 L1GTSC (Taiwan Semiconductor) |
DIODE GP 250V 200MA MINIMELF |
|
BAS321JFNexperia |
BAS321J/SOD323/SOD2 |
|
STPS15L25DSTMicroelectronics |
DIODE SCHOTTKY 25V 15A TO220AC |
|
SB2D-M3/5BTVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 2A DO214AA |
|
SJPM-H4VSanken Electric Co., Ltd. |
DIODE GEN PURP 400V 2A SJP |
|
1N2130ARGeneSiC Semiconductor |
DIODE GEN PURP REV 150V 60A DO5 |
|
RMPG06BHE3_A/53Vishay General Semiconductor – Diodes Division |
DIODE GPP 1A 100V 150NS MPG06 |
|
MSC050SDA170BRoving Networks / Microchip Technology |
SIC SBD 1700 V 50 A TO-247 |
|
FMXA-1106SSanken Electric Co., Ltd. |
DIODE GEN PURP 600V 10A TO220F |
|
RS1DLW RVGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 1A SOD123W |
|
V20PL50-M3/87AVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 50V 5.5A TO277A |