类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101 |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
二极管型: | Schottky |
电压 - 直流反向 (vr) (max): | 100 V |
电流 - 平均整流 (io): | 3A |
电压 - 正向 (vf) (max) @ if: | 850 mV @ 3 A |
速度: | Fast Recovery =< 500ns, > 200mA (Io) |
反向恢复时间 (trr): | - |
电流 - 反向泄漏@ vr: | 100 µA @ 100 V |
电容@vr, f: | - |
安装类型: | Surface Mount |
包/箱: | DO-219AB |
供应商设备包: | Sub SMA |
工作温度 - 结: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BAS21,215Nexperia |
DIODE GP 200V 200MA TO236AB |
|
RGP15ANTE Electronics, Inc. |
R-50V 1.5A FAST SW |
|
SBYV28-150-E3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 150V 3.5A DO201AD |
|
BAT1805E6327HTSA1Rochester Electronics |
PIN DIODE, 35V V(BR) |
|
V15P8-M3/87AVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 80V 4.6A TO277A |
|
V8P8HM3_A/HVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 80V 8A TO277A |
|
JANTX1N5619Roving Networks / Microchip Technology |
DIODE GEN PURP 600V 1A AXIAL |
|
JANTX1N3611Roving Networks / Microchip Technology |
DIODE GEN PURP 200V 1A AXIAL |
|
S1KFS MXGTSC (Taiwan Semiconductor) |
DIODE, 1A, 800V, SOD-128 |
|
MR850BULKEIC Semiconductor, Inc. |
DIODE GEN PURP 50V 3A DO201AD |
|
1N5415Roving Networks / Microchip Technology |
DIODE GEN PURP 50V 3A AXIAL |
|
BAS21LT1Rochester Electronics |
DIODE GEN PURP 250V 200MA SOT23 |
|
GS1Y-LTPMicro Commercial Components (MCC) |
DIODE GEN PURP 1.6KV 1A DO214AC |