English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | CoolSiC™+ |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 二极管型: | Silicon Carbide Schottky |
| 电压 - 直流反向 (vr) (max): | 650 V |
| 电流 - 平均整流 (io): | 2A (DC) |
| 电压 - 正向 (vf) (max) @ if: | 1.7 V @ 2 A |
| 速度: | No Recovery Time > 500mA (Io) |
| 反向恢复时间 (trr): | 0 ns |
| 电流 - 反向泄漏@ vr: | 35 µA @ 650 V |
| 电容@vr, f: | 70pF @ 1V, 1MHz |
| 安装类型: | Surface Mount |
| 包/箱: | 4-PowerTSFN |
| 供应商设备包: | PG-VSON-4 |
| 工作温度 - 结: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BYC8B-600,118WeEn Semiconductors Co., Ltd |
DIODE GEN PURP 500V 8A D2PAK |
|
SE20DGHM3/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 3.9A TO263AC |
|
SS26L RUGTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 60V 2A SUB SMA |
|
SF11GHR0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 50V 1A DO204AL |
|
VS-8EWF12S-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.2KV 8A TO252 |
|
VS-15TQ060-N3Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 60V 15A TO220AC |
|
BAS116LT1GSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 75V 200MA SOT23-3 |
|
STPSC5H12B-TR1STMicroelectronics |
DIODE SCHOTTKY 1.2KV 5A DPAK |
|
FSV330AFRochester Electronics |
RECTIFIER DIODE, SCHOTTKY, 3A, 3 |
|
CDBT-70-GComchip Technology |
DIODE SCHOTTKY 70V 70MA SOT23 |
|
APT60D120SGRoving Networks / Microchip Technology |
DIODE GEN PURP 1.2KV 60A D3 |
|
HER202G R0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 2A DO204AC |
|
UJ3D06506TSUnitedSiC |
650V 6A SIC SCHOTTKY DIODE G3, T |
