English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 二极管型: | Standard |
| 电压 - 直流反向 (vr) (max): | 200 V |
| 电流 - 平均整流 (io): | 15A |
| 电压 - 正向 (vf) (max) @ if: | 1.05 V @ 15 A |
| 速度: | Fast Recovery =< 500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | 35 ns |
| 电流 - 反向泄漏@ vr: | 10 µA @ 200 V |
| 电容@vr, f: | - |
| 安装类型: | Surface Mount |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| 供应商设备包: | DPAK |
| 工作温度 - 结: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SARS02V1Sanken Electric Co., Ltd. |
DIODE GEN PURP 800V 1.2A AXIAL |
|
BAS16THVLNexperia |
BAS16TH/SOT23/TO-236AB |
|
VS-CPU6006L-N3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 30A TO247AD |
|
GL34G/1Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 500MA DO213 |
|
S2MHM4GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 2A DO214AA |
|
BYM11-800-E3/97Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 1A DO213AB |
|
VS-10ETS12SLHM3Vishay General Semiconductor – Diodes Division |
DIODES - D2PAK-E3 |
|
1N5617GP-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 1A DO204AC |
|
RFV5BGE6STLROHM Semiconductor |
SUPER FAST RECOVERY DIODE - RFV5 |
|
HER305G A0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 3A DO201AD |
|
BYC5X-600,127Rochester Electronics |
NOW WEEN - BYC5X-600 - HYPERFAST |
|
GP3D012A065ASemiQ |
SIC SCHOTTKY DIODE 650V TO220 |
|
VS-305URA200Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 2KV 300A DO9 |
