English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Box |
| 零件状态: | Active |
| 二极管型: | Standard |
| 电压 - 直流反向 (vr) (max): | 100 V |
| 电流 - 平均整流 (io): | 4.29A (DC) |
| 电压 - 正向 (vf) (max) @ if: | 2.6 V @ 3.432 A |
| 速度: | Standard Recovery >500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | - |
| 电流 - 反向泄漏@ vr: | - |
| 电容@vr, f: | - |
| 安装类型: | Through Hole |
| 包/箱: | DO-204AH, DO-35, Axial |
| 供应商设备包: | DO-35 |
| 工作温度 - 结: | -55°C ~ 200°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
VS-12FR60MVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 12A DO203AA |
|
ISL9R1560G2Sanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 600V 15A TO247-2 |
|
TST30L60CW C0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 60V 15A TO220AB |
|
S1DHE3_A/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 1A DO214AC |
|
JANTX1N5811Roving Networks / Microchip Technology |
DIODE GEN PURP 150V 3A AXIAL |
|
VS-15EWH06FNTRR-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 15A D-PAK |
|
LSM840J/TR13Roving Networks / Microchip Technology |
DIODE SCHOTTKY 40V 8A DO214AB |
|
CFSH-4 TR PBFREECentral Semiconductor |
DIODE SCHOTTKY 40V 200MA SOD882 |
|
FS16SURGE |
1A -60V - ESGA (SOD-123FL) - REC |
|
VS-400U160DVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.6KV 400A DO205 |
|
UF4002HR0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 1A DO204AL |
|
BYW29-150-E3/45Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 150V 8A TO220AC |
|
FESB16DT-E3/45Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 16A TO263AB |
