English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 二极管型: | Standard |
| 电压 - 直流反向 (vr) (max): | 500 V |
| 电流 - 平均整流 (io): | 3A |
| 电压 - 正向 (vf) (max) @ if: | 1.4 V @ 3 A |
| 速度: | Fast Recovery =< 500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | 50 ns |
| 电流 - 反向泄漏@ vr: | 15 µA @ 500 V |
| 电容@vr, f: | - |
| 安装类型: | Surface Mount |
| 包/箱: | 2-SMD, J-Lead |
| 供应商设备包: | SJP |
| 工作温度 - 结: | -40°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SF15GHR0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 300V 1A DO204AL |
|
S2AA-13-FZetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 50V 1.5A SMA |
|
STTH3R06STMicroelectronics |
DIODE GEN PURP 600V 3A DO201AD |
|
S1ML R3GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 1KV 1A SUB SMA |
|
STTH806DSTMicroelectronics |
DIODE GEN PURP 600V 8A TO220AC |
|
NSB8DT-E3/81Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 8A TO263AB |
|
HS1GFLTSC (Taiwan Semiconductor) |
50NS 1A 400V HIGH EFFICIENT RECO |
|
VS-MBRB1645TRL-M3Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 45V 16A TO263AB |
|
RB160LAM-40TFTRROHM Semiconductor |
AUTOMOTIVE SCHOTTKY BARRIER DIOD |
|
UF600KDiotec Semiconductor |
DIODE UFR D8X7.5 800V 6A |
|
BYM13-20-E3/96Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 20V 1A DO213AB |
|
VS-60EPF06-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 60A TO247AC |
|
AS4PM-M3/86AVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 1KV 2.4A TO277 |
