English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 二极管型: | Standard |
| 电压 - 直流反向 (vr) (max): | 100 V |
| 电流 - 平均整流 (io): | 1A |
| 电压 - 正向 (vf) (max) @ if: | 975 mV @ 1 A |
| 速度: | Fast Recovery =< 500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | 25 ns |
| 电流 - 反向泄漏@ vr: | 2 µA @ 100 V |
| 电容@vr, f: | - |
| 安装类型: | Through Hole |
| 包/箱: | A, Axial |
| 供应商设备包: | - |
| 工作温度 - 结: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
RMPG06BHE3_A/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 1A MPG06 |
|
VS-MBRS360-M3/9ATVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 60V 3A DO214AB |
|
SL1KDiotec Semiconductor |
DIODE STD SOD-123FL 800V 1A |
|
VS-1N1190AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 40A DO203AB |
|
VS-15ETH06-1-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 15A TO262AA |
|
SICU0460B-TPMicro Commercial Components (MCC) |
650V,4A,SIC SBD,TO-252 PACKAGE |
|
BAS45A,143Nexperia |
DIODE GEN PURP 125V 250MA DO34 |
|
BYG22D-M3/TRVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 200V 2A DO214AC |
|
1N485ARoving Networks / Microchip Technology |
DIODE GEN PURP 180V 100MA DO7 |
|
STPS1H100AYSTMicroelectronics |
DIODE SCHOTTKY 100V 1A SMA |
|
EGF1ASanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 50V 1A SMA |
|
STPSC12065G-TRSTMicroelectronics |
SILICON CARBIDE DIODES |
|
MBR0560-TPMicro Commercial Components (MCC) |
DIODE SCHOTTKY 60V 500MA SOD123 |
