English
简体中文
AUTOMOTIVE-GRADE SILICON CARBIDE
IC FLASH 128GBIT MMC 169TFBGA
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101, ECOPACK®2 |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 二极管型: | Silicon Carbide Schottky |
| 电压 - 直流反向 (vr) (max): | 650 V |
| 电流 - 平均整流 (io): | 12A |
| 电压 - 正向 (vf) (max) @ if: | 1.45 V @ 12 A |
| 速度: | No Recovery Time > 500mA (Io) |
| 反向恢复时间 (trr): | 0 ns |
| 电流 - 反向泄漏@ vr: | 150 µA @ 650 V |
| 电容@vr, f: | 750pF @ 0V, 1MHz |
| 安装类型: | Surface Mount |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| 供应商设备包: | D2PAK HV |
| 工作温度 - 结: | -40°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
STPS20M100SFPSTMicroelectronics |
DIODE SCHOTTKY 100V 20A TO220FP |
|
VS-85HFL80S05Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 85A DO203AB |
|
V2FL45HM3/HVishay General Semiconductor – Diodes Division |
2A,45V,SMF,TRENCH SKY RECT. |
|
EGL41C-E3/97Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 150V 1A DO213AB |
|
NTE125NTE Electronics, Inc. |
R-SI 1000V 1A DO-41 |
|
MUR440-M3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 4A DO201AD |
|
LL4007G L0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 1000V 1A MELF |
|
SCS302APC9ROHM Semiconductor |
DIODE SCHOTTKY 650V 2A TO220-2 |
|
VS-15ETH03-1-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 300V 15A TO262 |
|
STTH812FPSTMicroelectronics |
DIODE GEN PURP 1.2KV 8A TO220FP |
|
SJPL-F4VRSanken Electric Co., Ltd. |
DIODE GEN PURP 400V 1.5A SJP |
|
SI-E8000-4Diotec Semiconductor |
HV DIODE D49X281 24000V 4A |
|
JAN1N4946Roving Networks / Microchip Technology |
DIODE GEN PURP 600V 1A AXIAL |