类型 | 描述 |
---|---|
系列: | eSMP® |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
二极管型: | Schottky |
电压 - 直流反向 (vr) (max): | 30 V |
电流 - 平均整流 (io): | 2A |
电压 - 正向 (vf) (max) @ if: | 550 mV @ 2 A |
速度: | Fast Recovery =< 500ns, > 200mA (Io) |
反向恢复时间 (trr): | - |
电流 - 反向泄漏@ vr: | 150 µA @ 30 V |
电容@vr, f: | - |
安装类型: | Surface Mount |
包/箱: | DO-220AA |
供应商设备包: | DO-220AA (SMP) |
工作温度 - 结: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MBR140ESFT1GSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 40V 1A SOD123FL |
|
JANTXV1N5553Roving Networks / Microchip Technology |
DIODE GEN PURP 800V 5A AXIAL |
|
245NQ015R-1SMC Diode Solutions |
DIODE SCHOTTKY 15V 240A PRM1-1 |
|
RMPG06KHE3_A/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 1A MPG06 |
|
S1GBTRSMC Diode Solutions |
DIODE GEN PURP 400V 1A SMB |
|
1N3214GeneSiC Semiconductor |
DIODE GEN PURP 600V 15A DO5 |
|
1N3210GeneSiC Semiconductor |
DIODE GEN PURP 200V 15A DO5 |
|
VBT3080S-M3/8WVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 30A 80V TO-263AB |
|
VS-8EWF10STRR-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 8A D-PAK |
|
RMPG06GHE3_A/53Vishay General Semiconductor – Diodes Division |
DIODE GPP 1A 400V 150NS MPG06 |
|
VS-T85HF10Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 85A D-55 |
|
D901S45TIR (Infineon Technologies) |
DIODE GEN PURP 4.5KV 1225A |
|
RS1BL RUGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 800MA SUBSMA |