类型 | 描述 |
---|---|
系列: | Z-Rec® |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
二极管型: | Silicon Carbide Schottky |
电压 - 直流反向 (vr) (max): | 600 V |
电流 - 平均整流 (io): | 5A (DC) |
电压 - 正向 (vf) (max) @ if: | 1.7 V @ 2 A |
速度: | No Recovery Time > 500mA (Io) |
反向恢复时间 (trr): | - |
电流 - 反向泄漏@ vr: | 50 µA @ 600 V |
电容@vr, f: | 11pF @ 400V, 1MHz |
安装类型: | Surface Mount |
包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
供应商设备包: | TO-252-2 |
工作温度 - 结: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SFS1604G MNGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 16A TO263AB |
|
SM5405-CTDComponents |
CUT-TAPE VERSION. STANDARD RECO |
|
CRH01(TE85R,Q,M)Toshiba Electronic Devices and Storage Corporation |
DIODE GEN PURP 200V 1A SFLAT |
|
DSI75-12BWickmann / Littelfuse |
DIODE GEN PURP 1.2KV 110A DO203 |
|
B150-M3/61TVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 50V 1A DO214AC |
|
JANTXV1N5550Roving Networks / Microchip Technology |
DIODE GEN PURP 200V 5A AXIAL |
|
ES1BLHRUGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 1A SUB SMA |
|
ES2GAL M3GTSC (Taiwan Semiconductor) |
35NS, 2A, 400V, SUPER FAST RECOV |
|
STPS3H100UFSTMicroelectronics |
DIODE SCHOTTKY 100V 3A SMBFLAT |
|
MA27077G0LPanasonic |
DIODE GP 35V 100MA SSSMINI2-F3 |
|
RAL1GDiotec Semiconductor |
DIODE FR DO-213AA 400V 1A |
|
BAS40-00-E3-18Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 40V 200MA SOT23 |
|
1N5626NTE Electronics, Inc. |
R-600 PRV 3A |